SiCFET N-Channel, Silicon Carbide,FET Type
SiCFET N-Channel, Silicon Carbide,FET Type
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SCT2450KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 10A (Tc) 585 mOhm @ 3A, 18V 4V @ 900µA 27nC @ 18V 463pF @ 800V 85W Through Hole TO-247-3
SCT2160KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 22A (Tc) 208 mOhm @ 7A, 18V 4V @ 2.5mA 62nC @ 18V 1200pF @ 800V 165W Through Hole TO-247-3
SCT2080KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 179W Through Hole TO-247-3
SCH2080KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 1850pF @ 800V 179W Through Hole TO-247-3
SCT2120AFC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 650V 29A (Tc) - - - - 165W Through Hole TO-220-3
C2M1000170D CREE INC
SiCFET N-Channel, Silicon Carbide 1700V (1.7kV) 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 69W Through Hole TO-247-3
C2M0160120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 17.7A 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 125W Through Hole TO-247-3
C2M0080120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 31.6A (Tc) 98 mOhm @ 20A, 20V 2.2V @ 1mA 49.2nC @ 20V 950pF @ 1000V 208W Through Hole TO-247-3
CMF10120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 152W Through Hole TO-247-3
CMF20120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 150W Through Hole TO-247-3