| FET Type | SiCFET N-Channel, Silicon Carbide |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 17.7A |
| Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Gate Charge (Qg) @ Vgs | 32.6nC @ 20V |
| Input Capacitance (Ciss) @ Vds | 527pF @ 800V |
| Power - Max | 125W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
© 2016 Copyright
