| FET Type | SiCFET N-Channel, Silicon Carbide |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 165W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
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