| FET Type | SiCFET N-Channel, Silicon Carbide |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 31.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Gate Charge (Qg) @ Vgs | 49.2nC @ 20V |
| Input Capacitance (Ciss) @ Vds | 950pF @ 1000V |
| Power - Max | 208W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
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