FET Type | SiCFET N-Channel, Silicon Carbide |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id | 4V @ 4.4mA |
Gate Charge (Qg) @ Vgs | 106nC @ 18V |
Input Capacitance (Ciss) @ Vds | 1850pF @ 800V |
Power - Max | 179W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |