FET Type | SiCFET N-Channel, Silicon Carbide |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) @ Vgs | 90.8nC @ 20V |
Input Capacitance (Ciss) @ Vds | 1915pF @ 800V |
Power - Max | 150W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |