Attribute
Description
Manufacturer Part Number
SIZ918DT-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 14.3A,
26A 6X5
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 14.3A, 26A | |
| Max On-State Resistance | 12 mOhm @ 13.8A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Gate Charge at Vgs | 21nC @ 10V | |
| Input Cap at Vds | 790pF @ 15V | |
| Maximum Power Handling | 4.2W, 5.2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | - |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 14.3A, 26A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 21nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 790pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Peak power 4.2W, 5.2W for device protection. Peak Rds(on) at Id 21nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 12 mOhm @ 13.8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
