SIZ910DT-T1-GE3

SIZ910DT-T1-GE3
Attribute
Description
Manufacturer Part Number
SIZ910DT-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 30V 40A 8POWERPAIR
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 40A
Max On-State Resistance 5.8mOhm @ 20A, 10V
Max Threshold Gate Voltage 2.2V @ 250µA
Max Gate Charge at Vgs 40nC @ 10V
Max Input Cap at Vds 1500pF @ 15V
Maximum Power Handling 48W, 100W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerWDFN
Vendor Package Type 8-PowerPair® (6x5)

Description

Provided in a setup characterized as 2 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 40A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 40nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 40nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1500pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 1500pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-PowerWDFN providing mechanical and thermal shielding. Enclosure type 8-PowerPair® (6x5) ensuring device integrity. Peak power 48W, 100W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 40nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.8mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 8-PowerPair® (6x5) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.