Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) Asymmetrical | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 16A, 30A | |
| Max On-State Resistance | 6.8 mOhm @ 19A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Gate Charge at Vgs | 18nC @ 10V | |
| Input Cap at Vds | 820pF @ 10V | |
| Maximum Power Handling | 3.9W, 4.6W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | - |
Description
Measures resistance at forward current 2 N-Channel (Dual) Asymmetrical for LED or diode evaluation. Supports a continuous drain current (Id) of 16A, 30A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 N-Channel (Dual) Asymmetrical. Upholds 18nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 820pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Peak power 3.9W, 4.6W for device protection. Peak Rds(on) at Id 18nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.8 mOhm @ 19A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
