STS2DNF30L

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 3A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 4.5nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 4.5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 121pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 121pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 2W for device protection. Product condition Not For New Designs for availability and lifecycle. Peak Rds(on) at Id 4.5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 110mOhm @ 1A, 10V for MOSFET criteria. Product or component classification series STripFET™. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.