Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 6A | |
| Max On-State Resistance | 31mOhm @ 4.8A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Max Gate Charge at Vgs | 8.6nC @ 10V | |
| Max Input Cap at Vds | 300pF @ 15V | |
| Maximum Power Handling | 10.4W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | PowerPAK® ChipFET™ Dual | |
| Vendor Package Type | PowerPAK® ChipFet Dual |
Description
Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 6A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 8.6nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 8.6nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 300pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 300pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case PowerPAK® ChipFET™ Dual providing mechanical and thermal shielding. Enclosure type PowerPAK® ChipFet Dual ensuring device integrity. Peak power 10.4W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 8.6nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 31mOhm @ 4.8A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® ChipFet Dual for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
