GA03JT12-247 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide, Normally Off
|
1200V (1.2kV)
|
3A (Tc) (95°C)
|
460 mOhm @ 3A
|
-
|
-
|
-
|
91W
|
Through Hole
|
TO-247-3
|
GA06JT12-247 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide, Normally Off
|
1200V (1.2kV)
|
6A (Tc) (90°C)
|
220 mOhm @ 6A
|
-
|
-
|
-
|
146W
|
Through Hole
|
TO-247-3
|
GA05JT12-247 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide, Normally Off
|
1200V (1.2kV)
|
5A (Tc)
|
280 mOhm @ 5A, 100mA
|
-
|
-
|
-
|
57W
|
Through Hole
|
TO-247-3
|
GA20JT12-247 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide, Normally Off
|
1200V (1.2kV)
|
20A
|
70 mOhm @ 20A, 400mA
|
-
|
-
|
-
|
5W
|
Through Hole
|
TO-247-3
|
C2M0160120D |
CREE INC |
|
SiCFET N-Channel, Silicon Carbide
|
1200V (1.2kV)
|
17.7A
|
196 mOhm @ 10A, 20V
|
2.5V @ 500µA
|
32.6nC @ 20V
|
527pF @ 800V
|
125W
|
Through Hole
|
TO-247-3
|
C2M0080120D |
CREE INC |
|
SiCFET N-Channel, Silicon Carbide
|
1200V (1.2kV)
|
31.6A (Tc)
|
98 mOhm @ 20A, 20V
|
2.2V @ 1mA
|
49.2nC @ 20V
|
950pF @ 1000V
|
208W
|
Through Hole
|
TO-247-3
|
CMF10120D |
CREE INC |
|
SiCFET N-Channel, Silicon Carbide
|
1200V (1.2kV)
|
24A (Tc)
|
220 mOhm @ 10A, 20V
|
4V @ 500µA
|
47.1nC @ 20V
|
928pF @ 800V
|
152W
|
Through Hole
|
TO-247-3
|
CMF20120D |
CREE INC |
|
SiCFET N-Channel, Silicon Carbide
|
1200V (1.2kV)
|
42A (Tc)
|
110 mOhm @ 20A, 20V
|
4V @ 1mA
|
90.8nC @ 20V
|
1915pF @ 800V
|
150W
|
Through Hole
|
TO-247-3
|
CAS100H12AM1 |
CREE INC |
|
2 N-Channel (Half Bridge)
|
1200V (1.2kV)
|
165A
|
20 mOhm @ 20A, 20V
|
3.1V @ 50mA
|
-
|
9500pF @ 800V
|
-
|
Chassis Mount
|
Module
|
CCS050M12CM2 |
CREE INC |
|
6 N-Channel (3-Phase Bridge)
|
1200V (1.2kV)
|
87A
|
34 mOhm @ 50A, 20V
|
2.3V @ 2.5mA
|
180nC @ 20V
|
2.810nF @ 800V
|
337W
|
Chassis Mount
|
Module
|