1200V (1.2kV),Drain to Source Voltage (Vdss)
150 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
GA03JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 3A (Tc) (95°C) 460 mOhm @ 3A - - - 91W Through Hole TO-247-3
GA06JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 6A (Tc) (90°C) 220 mOhm @ 6A - - - 146W Through Hole TO-247-3
GA05JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 5A (Tc) 280 mOhm @ 5A, 100mA - - - 57W Through Hole TO-247-3
GA20JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 20A 70 mOhm @ 20A, 400mA - - - 5W Through Hole TO-247-3
C2M0160120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 17.7A 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 125W Through Hole TO-247-3
C2M0080120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 31.6A (Tc) 98 mOhm @ 20A, 20V 2.2V @ 1mA 49.2nC @ 20V 950pF @ 1000V 208W Through Hole TO-247-3
CMF10120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 152W Through Hole TO-247-3
CMF20120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 150W Through Hole TO-247-3
CAS100H12AM1 CREE INC
2 N-Channel (Half Bridge) 1200V (1.2kV) 165A 20 mOhm @ 20A, 20V 3.1V @ 50mA - 9500pF @ 800V - Chassis Mount Module
CCS050M12CM2 CREE INC
6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 87A 34 mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2.810nF @ 800V 337W Chassis Mount Module