Manufacture :GENESIC SEMICONDUCTOR INC
22 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
GA03JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 3A (Tc) (95°C) 460 mOhm @ 3A - - - 91W Through Hole TO-247-3
GA06JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 6A (Tc) (90°C) 220 mOhm @ 6A - - - 146W Through Hole TO-247-3
GA04JT17-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1700V (1.7kV) 4A (Tc) (95°C) 500 mOhm @ 4A, 10V - - - 91W Through Hole TO-247-3
GA08JT17-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1700V (1.7kV) 8A (Tc) (90°C) 250 mOhm @ 8A - - - 16W Through Hole TO-247-3
2N7638-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 8A (Tc) (158°C) 170 mOhm @ 8A - - 720pF @ 35V 11W Surface Mount TO-276AA
2N7637-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 7A (Tc) (165°C) 170 mOhm @ 7A - - 720pF @ 35V 8W Through Hole TO-257-3
GA16JT17-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1700V (1.7kV) 16A (Tc) (90°C) 110 mOhm @ 16A - - - 32W Through Hole TO-247-3
GA05JT12-263 GENESIC SEMICONDUCTOR INC
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GA05JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 5A (Tc) 280 mOhm @ 5A, 100mA - - - 57W Through Hole TO-247-3
2N7635-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V 7W Through Hole TO-257-3