| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N8032-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | 3.4°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8030-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8024-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 750mA | 1.74V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 66pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8026-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2.5A | 1.56V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 237pF @ 1V, 1MHz | 3.4°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8034-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 9.4A (DC) | 1.34V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 1107pF @ 1V, 1MHz | 1.08°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8028-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 9.4A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 884pF @ 1V, 1MHz | 1.08°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 |
© 2016 Copyright
