| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6098 | GENESIC SEMICONDUCTOR INC | Schottky | 40V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 1°C/W Jc | -65°C ~ 150°C | Chassis, Stud Mount | DO-203AB, DO-5, Stud | |
| S300Y | GENESIC SEMICONDUCTOR INC | Standard | 1600V (1.6kV) | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | 0.16°C/W Jc | -60°C ~ 180°C | - | - | |
| GB01SLT06-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 1A (DC) | 2V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 6.5V | 76pF @ 1V, 1MHz | 3.55°C/W Jc | -55°C ~ 175°C | - | - | |
| GB02SLT12-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | - | - | |
| 1N1204AR | GENESIC SEMICONDUCTOR INC | Standard, Reverse Polarity | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-203AA, DO-4, Stud | |
| 1N1199A | GENESIC SEMICONDUCTOR INC | Standard | 50V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-203AA, DO-4, Stud | |
| GAP3SLT33-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 3300V (3.3kV) | 300mA (DC) | 2.2V @ 300mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 3300V | 42pF @ 1V, 1MHz | 1.42°C/W Jc | -55°C ~ 175°C | - | - | |
| GAP3SLT33-220FP | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 3300V (3.3kV) | 300mA | 1.7V @ 300mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 3300V | 42pF @ 1V, 1MHz | 1.42°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| S300YR | GENESIC SEMICONDUCTOR INC | Standard, Reverse Polarity | 1600V (1.6kV) | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | 0.16°C/W Jc | -60°C ~ 180°C | - | - | |
| 1N1200AR | GENESIC SEMICONDUCTOR INC | Standard, Reverse Polarity | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-203AA, DO-4, Stud |
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