Diode Type | Silicon Carbide Schottky |
Reverse DC Voltage(Vr) | 650V |
Current - Average Rectified (Io) | 2.5A |
Forward Voltage (Vf) | 1.3V @ 2.5A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Reverse Leakage Current @ Vr | 5µA @ 650V |
Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
Thermal Resistance | 3.4°C/W Jc |
Operating Temperature - Junction | -55°C ~ 250°C |
Mounting Type | Through Hole |
Package / Case | TO-257-3 |