| Diode Type | Silicon Carbide Schottky |
| Reverse DC Voltage(Vr) | 650V |
| Current - Average Rectified (Io) | 2.5A |
| Forward Voltage (Vf) | 1.3V @ 2.5A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Reverse Leakage Current @ Vr | 5µA @ 650V |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Thermal Resistance | 3.4°C/W Jc |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
© 2016 Copyright
