| Diode Type | Silicon Carbide Schottky |
| Reverse DC Voltage(Vr) | 1200V (1.2kV) |
| Current - Average Rectified (Io) | 750mA |
| Forward Voltage (Vf) | 1.74V @ 750mA |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Reverse Leakage Current @ Vr | 10µA @ 1200V |
| Capacitance @ Vr, F | 66pF @ 1V, 1MHz |
| Thermal Resistance | 9.52°C/W Jc |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
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