2N6547
Data Sheet
Attribute
Description
Manufacturer Part Number
2N6547
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
15A,
400V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 15A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 5A, 2V | |
| Maximum Power Handling | 175W | |
| Transition Freq | 3MHz | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-204AA, TO-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 5V @ 3A, 15A. Offers 3MHz transition frequency for seamless signal modulation. Mounting style Chassis Mount for structural integrity. Enclosure/case TO-204AA, TO-3 providing mechanical and thermal shielding. Peak power 175W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 5V @ 3A, 15A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
