Attribute
Description
Manufacturer Part Number
BUR51
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
60A,
200V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 60A | |
| Max Collector-Emitter Breakdown | 200V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5A, 50A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 4V | |
| Maximum Power Handling | 350W | |
| Transition Freq | 16MHz | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-204AA, TO-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 60A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 5A, 50A. Offers 16MHz transition frequency for seamless signal modulation. Mounting style Chassis Mount for structural integrity. Enclosure/case TO-204AA, TO-3 providing mechanical and thermal shielding. Peak power 350W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.5V @ 5A, 50A for transistor parameters. Highest collector-emitter breakdown voltage 200V.
