Attribute
Description
Manufacturer Part Number
2N3055
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
15A,
60V
Note :
GST will not be applied to orders shipping outside of India
Stock: 50
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 474.72 | ₹ 23,736.00 |
Stock: 14
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 3,821.66 | ₹ 3,821.66 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A | |
| Collector Cutoff Max | 700µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V | |
| Maximum Power Handling | 115W | |
| Transition Freq | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-204AA, TO-3 |
Description
Measures resistance at forward current 700µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 700µA. Features a DC current gain hFE at Ic evaluated at 3V @ 3.3A, 10A. Mounting style Chassis Mount for structural integrity. Enclosure/case TO-204AA, TO-3 providing mechanical and thermal shielding. Peak power 115W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 3V @ 3.3A, 10A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
