Attribute
Description
Manufacturer Part Number
2N6059
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V | |
| Maximum Power Handling | 150W | |
| Transition Freq | 4MHz | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-204AA, TO-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 12A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 3V @ 120mA, 12A. Offers 4MHz transition frequency for seamless signal modulation. Mounting style Chassis Mount for structural integrity. Enclosure/case TO-204AA, TO-3 providing mechanical and thermal shielding. Peak power 150W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 3V @ 120mA, 12A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
