2SA1186
Data Sheet
Attribute
Description
Manufacturer Part Number
2SA1186
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
10A,
150V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 10A | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 3A, 4V | |
| Maximum Power Handling | 100W | |
| Transition Freq | 60MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3P-3 Full Pack |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2V @ 500mA, 5A. Offers 60MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3 Full Pack providing mechanical and thermal shielding. Peak power 100W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 2V @ 500mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 150V.
