2SA1386A
Data Sheet
Attribute
Description
Manufacturer Part Number
2SA1386A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
15A,
180V
Note :
GST will not be applied to orders shipping outside of India
Stock: 100
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 59 | ₹ 181.43 | ₹ 10,704.37 |
| 19 | ₹ 194.38 | ₹ 3,693.22 |
| 7 | ₹ 252.69 | ₹ 1,768.83 |
| 2 | ₹ 388.75 | ₹ 777.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 180V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5A, 4V | |
| Maximum Power Handling | 130W | |
| Transition Freq | 40MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2V @ 500mA, 5A. Offers 40MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3, SC-65-3 providing mechanical and thermal shielding. Peak power 130W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 2V @ 500mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 180V.
