2SD2081
Data Sheet
Attribute
Description
Manufacturer Part Number
2SD2081
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 10A | |
| Max Collector-Emitter Breakdown | 120V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 5A | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 5A, 4V | |
| Maximum Power Handling | 30W | |
| Transition Freq | 60MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 5mA, 5A. Offers 60MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 1.5V @ 5mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 120V.
