STD03P
Data Sheet
Attribute
Description
Manufacturer Part Number
STD03P
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 160V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 10mA, 10A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A, 4V | |
| Maximum Power Handling | 160W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3P-5 |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 15A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2V @ 10mA, 10A. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-5 providing mechanical and thermal shielding. Peak power 160W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 2V @ 10mA, 10A for transistor parameters. Highest collector-emitter breakdown voltage 160V.
