Attribute
Description
Manufacturer Part Number
PMBTA45,215
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
150mA,...
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 150mA | |
| Max Collector-Emitter Breakdown | 500V | |
| Vce Saturation (Max) @ Ib, Ic | 90mV @ 6mA, 50mA | |
| Collector Cutoff Max | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V | |
| Maximum Power Handling | 300mW | |
| Transition Freq | 35MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 100nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 150mA. Offers a collector cutoff current rated at 100nA. Features a DC current gain hFE at Ic evaluated at 90mV @ 6mA, 50mA. Offers 35MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 300mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 90mV @ 6mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 500V.
