Attribute
Description
Manufacturer Part Number
MMBT2907ALT1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
600mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 60000
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 60000 | ₹ 0.70 | ₹ 42,000.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Maximum Power Handling | 225mW | |
| Transition Freq | 200MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Provides a maximum collector current (Ic) of 600mA. Features a DC current gain hFE at Ic evaluated at 1.6V @ 50mA, 500mA. Offers 200MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 1.6V @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.
