Attribute
Description
Manufacturer Part Number
MMBT3906LT1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
200mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 10
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 1.18 | ₹ 11.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 200mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V | |
| Maximum Power Handling | 225mW | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Provides a maximum collector current (Ic) of 200mA. Features a DC current gain hFE at Ic evaluated at 400mV @ 5mA, 50mA. Offers 250MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 400mV @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 40V.
