MMBTA55-7
Data Sheet
Attribute
Description
Manufacturer Part Number
MMBTA55-7
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
500mA,...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V | |
| Maximum Power Handling | 300mW | |
| Transition Freq | 50MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 250mV @ 10mA, 100mA. Offers 50MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 300mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 250mV @ 10mA, 100mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.
