Stock: 844
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 105.02 | ₹ 105.02 |
| 10 | ₹ 73.60 | ₹ 736.00 |
| 100 | ₹ 57.32 | ₹ 5,732.00 |
| 500 | ₹ 48.59 | ₹ 24,295.00 |
| 1000 | ₹ 39.52 | ₹ 39,520.00 |
| 2500 | ₹ 37.20 | ₹ 93,000.00 |
| 5000 | ₹ 35.42 | ₹ 1,77,100.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 9.9A (Tc) | |
| Max On-State Resistance | 380 mOhm @ 3.2A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 260µA | |
| Gate Charge at Vgs | 24.8nC @ 10V | |
| Input Cap at Vds | 584pF @ 100V | |
| Maximum Power Handling | 73W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 9.9A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 24.8nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 584pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 73W for device protection. Peak Rds(on) at Id 24.8nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 380 mOhm @ 3.2A, 13V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 260µA for MOSFET threshold level.
