Stock: 363
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 108.58 | ₹ 108.58 |
| 10 | ₹ 67.91 | ₹ 679.10 |
| 100 | ₹ 44.77 | ₹ 4,477.00 |
| 500 | ₹ 35.42 | ₹ 17,710.00 |
| 1000 | ₹ 31.42 | ₹ 31,420.00 |
| 2500 | ₹ 28.75 | ₹ 71,875.00 |
| 5000 | ₹ 25.81 | ₹ 1,29,050.00 |
| 10000 | ₹ 24.21 | ₹ 2,42,100.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | CoolMOS™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 500 V | |
| Continuous Drain Current at 25C | 5A (Tc) | |
| Gate Drive Voltage Range | 13V | |
| Max On-State Resistance | 800mOhm @ 1.5A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 130µA | |
| Max Gate Charge at Vgs | 12.4 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 280 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 26.4W (Tc) | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | PG-TO220-FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates drive voltage specified at 13V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 12.4 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 12.4 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 280 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 280 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type PG-TO220-FP ensuring device integrity. Highest power dissipation 26.4W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 12.4 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 800mOhm @ 1.5A, 13V for MOSFET criteria. Product or component classification series CoolMOS™. Manufacturer package type PG-TO220-FP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3.5V @ 130µA for MOSFET threshold level.
