Stock: 850
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 63.28 | ₹ 1,58,200.00 |
| 1250 | ₹ 65.48 | ₹ 81,850.00 |
| 500 | ₹ 67.31 | ₹ 33,655.00 |
| 250 | ₹ 70.93 | ₹ 17,732.50 |
| 50 | ₹ 72.39 | ₹ 3,619.50 |
Stock: 33
Distributor: 150
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 68.53 | ₹ 68.53 |
| 100 | ₹ 56.96 | ₹ 5,696.00 |
| 500 | ₹ 50.73 | ₹ 25,365.00 |
| 1000 | ₹ 48.95 | ₹ 48,950.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | CoolMOS™ CE | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 500 V | |
| Continuous Drain Current at 25C | 18.1A (Tc) | |
| Gate Drive Voltage Range | 13V | |
| Max On-State Resistance | 280mOhm @ 4.2A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 350µA | |
| Max Gate Charge at Vgs | 32.6 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 773 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 30.4W (Tc) | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | PG-TO220-3-31 | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 18.1A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates drive voltage specified at 13V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 32.6 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 32.6 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 773 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 773 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type PG-TO220-3-31 ensuring device integrity. Highest power dissipation 30.4W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 32.6 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 280mOhm @ 4.2A, 13V for MOSFET criteria. Product or component classification series CoolMOS™ CE. Manufacturer package type PG-TO220-3-31 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3.5V @ 350µA for MOSFET threshold level.
