Stock: 963
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 140.62 | ₹ 140.62 |
| 10 | ₹ 89.00 | ₹ 890.00 |
| 100 | ₹ 59.36 | ₹ 5,936.00 |
| 500 | ₹ 48.59 | ₹ 24,295.00 |
| 1000 | ₹ 42.54 | ₹ 42,540.00 |
| 2500 | ₹ 39.07 | ₹ 97,675.00 |
| 5000 | ₹ 35.42 | ₹ 1,77,100.00 |
| 10000 | ₹ 35.07 | ₹ 3,50,700.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | CoolMOS™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 500 V | |
| Continuous Drain Current at 25C | 9.9A (Tc) | |
| Gate Drive Voltage Range | 13V | |
| Max On-State Resistance | 380mOhm @ 3.2A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 260µA | |
| Max Gate Charge at Vgs | 24.8 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 584 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 29.2W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | PG-TO220-FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 9.9A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates drive voltage specified at 13V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 24.8 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 24.8 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 584 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 584 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type PG-TO220-FP ensuring device integrity. Highest power dissipation 29.2W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 24.8 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 380mOhm @ 3.2A, 13V for MOSFET criteria. Product or component classification series CoolMOS™. Manufacturer package type PG-TO220-FP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3.5V @ 260µA for MOSFET threshold level.
