8.1nC @ 4.5V,Gate Charge (Qg) @ Vgs
8.1nC @ 4.5V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO6604 ALPHA & OMEGA SEMICONDUCTOR LTD
N and P-Channel 20V 3.4A, 2.5A 60 mOhm @ 3.4A, 4.5V 1V @ 250µA 8.1nC @ 4.5V 570pF @ 10V 1.15W Surface Mount SC-74, SOT-457
CSD16406Q3 TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 25V 19A (Ta), 60A (Tc) 5.3 mOhm @ 20A, 10V 2.2V @ 250µA 8.1nC @ 4.5V 1100pF @ 12.5V 2.7W Surface Mount 8-TDFN Exposed Pad
IRFH3707TR2PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 2.8W Surface Mount 8-PowerVDFN
IRFHM8337TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 2.8W Surface Mount 8-PowerTDFN
IRFH3707TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 2.8W Surface Mount 8-PowerVDFN
PMDPB85UPE,115 NXP SEMICONDUCTORS
2 P-Channel (Dual) 20V 2.9A (Tc) 103 mOhm @ 1.3A, 4.5V 950mV @ 250µA 8.1nC @ 4.5V 514pF @ 10V 515mW Surface Mount 6-UDFN Exposed Pad
SSM3J321T(TE85L,F) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SSM3J129TU(TE85L) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 4.6A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 500mW Surface Mount 3-SMD, Flat Leads