Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Rds On (Max) @ Id, Vgs 12.4 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) @ Vgs 8.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 755pF @ 15V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN