Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Rds On (Max) @ Id, Vgs 103 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 8.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 514pF @ 10V
Power - Max 515mW
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad