Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Rds On (Max) @ Id, Vgs 46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs 8.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 640pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3