| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AON2705 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET P-Channel, Schottky, Metal Oxide | 30V | 3A (Ta) | 108 mOhm @ 3A, 10V | 2.3V @ 250µA | 6nC @ 10V | 180pF @ 15V | 1.5W | Surface Mount | 6-WDFN Exposed Pad | |
| PMFPB8032XP,115 | NXP SEMICONDUCTORS | MOSFET P-Channel, Schottky, Metal Oxide | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 485mW | Surface Mount | 6-UDFN Exposed Pad | |
| PMFPB8040XP,115 | NXP SEMICONDUCTORS | MOSFET P-Channel, Schottky, Metal Oxide | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 485mW | Surface Mount | 6-UDFN Exposed Pad | |
| ES6U42T2R | ROHM CO LTD | MOSFET P-Channel, Schottky, Metal Oxide | 20V | 1A | 390 mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | 800mW | - | - | |
| TT8U2TCR | ROHM CO LTD | MOSFET P-Channel, Schottky, Metal Oxide | 20V | 2.4A | 105 mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | 850pF @ 10V | 1W | - | - | |
| SIA817EDJ-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Schottky, Metal Oxide | 30V | 4.2A, Ta, 4.5A Tc | 65 mOhm @ 3A, 10V | 1.3V @ 250µA | 23nC @ 10V | 600pF @ 15V | 1.9W, 1.9W | Surface Mount | PowerPAK® SC-70-6 Dual |
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