MOSFET P-Channel, Schottky, Metal Oxide,FET Type
4.2A, Ta, 4.5A Tc,Current - Continuous Drain (Id) @ 25°C
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIA817EDJ-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Schottky, Metal Oxide 30V 4.2A, Ta, 4.5A Tc 65 mOhm @ 3A, 10V 1.3V @ 250µA 23nC @ 10V 600pF @ 15V 1.9W, 1.9W Surface Mount PowerPAK® SC-70-6 Dual