Specification
FET Type MOSFET P-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.2A, Ta, 4.5A Tc
Rds On (Max) @ Id, Vgs 65 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 600pF @ 15V
Power - Max 1.9W, 1.9W
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual