Specification
FET Type MOSFET P-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 150pF @ 10V
Power - Max 800mW
Mounting Type -
Package / Case -