FET Type | MOSFET P-Channel, Schottky, Metal Oxide |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) @ Vgs | 2.1nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 150pF @ 10V |
Power - Max | 800mW |
Mounting Type | - |
Package / Case | - |