3.4°C/W Jc,Thermal Resistance
11 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
FFPF08H60STU FAIRCHILD SEMICONDUCTOR CORP
Standard 600V 8A 2.1V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 45ns 100µA @ 600V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
FFPF08S60STU FAIRCHILD SEMICONDUCTOR CORP
Standard 600V 8A 2.6V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 30ns 100µA @ 600V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
1N8032-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 650V 2.5A 1.3V @ 2.5A No Recovery Time > 500mA (Io) 0ns 5µA @ 650V 274pF @ 1V, 1MHz 3.4°C/W Jc -55°C ~ 250°C Through Hole TO-257-3
QH05TZ600 POWER INTEGRATIONS INC
Schottky 600V 5A 3.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 10ns 250µA @ 600V 17pF @ 10V, 1MHz 3.4°C/W Jc 150°C (Max) Through Hole TO-220-2
FFPF08S60STTU FAIRCHILD SEMICONDUCTOR CORP
Standard 600V 8A 2.6V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 30ns 100µA @ 600V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack
FFB05U120STM FAIRCHILD SEMICONDUCTOR CORP
Standard 1200V (1.2kV) 5A 3.5V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 100ns 5µA @ 1200V - 3.4°C/W Jc -65°C ~ 150°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FFPF05U120STU FAIRCHILD SEMICONDUCTOR CORP
Standard 1200V (1.2kV) 5A 3.5V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 100ns 5µA @ 1200V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
FFPF05U120STTU FAIRCHILD SEMICONDUCTOR CORP
Standard 1200V (1.2kV) 5A 3.5V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 100ns 5µA @ 1200V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
FFPF10H60STU FAIRCHILD SEMICONDUCTOR CORP
Standard 600V 10A 2.5V @ 10A Fast Recovery =< 500ns, > 200mA (Io) 40ns 1mA @ 600V - 3.4°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
1N8026-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 2.5A 1.56V @ 2.5A No Recovery Time > 500mA (Io) 0ns 10µA @ 1200V 237pF @ 1V, 1MHz 3.4°C/W Jc -55°C ~ 250°C Through Hole TO-257-3