FFPF08H60STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
8A
|
2.1V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
45ns
|
100µA @ 600V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
FFPF08S60STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
8A
|
2.6V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
100µA @ 600V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
1N8032-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
650V
|
2.5A
|
1.3V @ 2.5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
5µA @ 650V
|
274pF @ 1V, 1MHz
|
3.4°C/W Jc
|
-55°C ~ 250°C
|
Through Hole
|
TO-257-3
|
QH05TZ600 |
POWER INTEGRATIONS INC |
|
Schottky
|
600V
|
5A
|
3.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
10ns
|
250µA @ 600V
|
17pF @ 10V, 1MHz
|
3.4°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
FFPF08S60STTU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
8A
|
2.6V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
100µA @ 600V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack
|
FFB05U120STM |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
5A
|
3.5V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
5µA @ 1200V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FFPF05U120STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
5A
|
3.5V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
5µA @ 1200V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
FFPF05U120STTU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
5A
|
3.5V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
5µA @ 1200V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
FFPF10H60STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
10A
|
2.5V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
40ns
|
1mA @ 600V
|
-
|
3.4°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
1N8026-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
2.5A
|
1.56V @ 2.5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
10µA @ 1200V
|
237pF @ 1V, 1MHz
|
3.4°C/W Jc
|
-55°C ~ 250°C
|
Through Hole
|
TO-257-3
|