Manufacture :NXP SEMICONDUCTORS
-,Gate Charge (Qg) @ Vgs
90pF @ 25V,Input Capacitance (Ciss) @ Vds
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP230,135 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 210mA 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP220,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP225,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 250V 225mA 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSS192,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 240V 200mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1W Surface Mount TO-243AA
BSS192,135 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 240V 200mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1W Surface Mount TO-243AA
BSP254A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 250V 200mA (Ta) 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSP304A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 170mA (Ta) 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads