Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Rds On (Max) @ Id, Vgs 17 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.55V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 90pF @ 25V
Power - Max 1W
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads