MOSFET P-CH 200V 225MA SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-200V; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No. of Pins:4; Operatin
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 225mA (Ta)
Rds On (Max) @ Id, Vgs 12 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 90pF @ 25V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA