FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 225mA (Ta) |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 90pF @ 25V |
Power - Max | 1.5W |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |