P CH, DMOS FET, -250V, -225MA, 4-SOT-223; P CH, DMOS FET, -250V, -225MA, 4-SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-225mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 225mA
Rds On (Max) @ Id, Vgs 15 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 90pF @ 25V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA