| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Y65-100E,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 19A | 63.3 mOhm @ 5A, 10V | 2.1V @ 1mA | 14nC @ 5V | 1523pF @ 25V | 64W | - | - | |
| PSMN050-80BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 22A (Tmb) | 46 mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | 633pF @ 12V | 56W | - | - | |
| PSMN016-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 148W | - | - | |
| BUK9Y12-100E,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 85A | 12 mOhm @ 25A, 5V | 2.1V @ 1mA | 64nC @ 5V | 7973pF @ 25V | 238W | - | - | |
| PSMN6R3-120ESQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 120V | 70A (Tmb) | 6.7 mOhm @ 25A, 10V | 4V @ 250µA | 207.1nC @ 10V | 11384pF @ 60V | 405W | - | - | |
| PSMN8R0-40BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 77A (Tmb) | 7.6 mOhm @ 25A, 10V | 4V @ 1mA | 21nC @ 10V | 1262pF @ 12V | 86W | - | - | |
| PSMN034-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 32A (Tmb) | 34.5 mOhm @ 15A, 10V | 4V @ 1mA | 23.8nC @ 10V | 1201pF @ 50V | 86W | - | - | |
| PSMN7R6-60BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 92A (Tmb) | 7.8 mOhm @ 25A, 10V | 4V @ 1mA | 38.7nC @ 10V | 2651pF @ 30V | 149W | - | - | |
| PSMN2R5-60PLQ | NXP SEMICONDUCTORS | MOSFET N-Channel, FREDFET | 60V | 1.5A (Tc) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | - | 349W | - | - | |
| PMT21EN,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 7.4A (Ta) | 21 mOhm @ 7.4A, 10V | 2.5V @ 250µA | 14.4nC @ 15V | 588pF @ 15V | 820mW | - | - |
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