Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 19A
Rds On (Max) @ Id, Vgs 63.3 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) @ Vgs 14nC @ 5V
Input Capacitance (Ciss) @ Vds 1523pF @ 25V
Power - Max 64W
Mounting Type -
Package / Case -