Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 77A (Tmb)
Rds On (Max) @ Id, Vgs 7.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1262pF @ 12V
Power - Max 86W
Mounting Type -
Package / Case -